Special Topic on Detector Simulation

Abstract: This topic employs Nuwa TCAD to simulate the optoelectronic characteristics of PIN APD, SAGCM APD, UTC-PD, QWIP, MSM PD, and Type II PD detectors. It demonstrates the structure modeling process for different types of detectors in Nuwa TCAD, including related model parameter settings and characteristic results. The goal is to enable users to fully understand and master the operation and usage of Nuwa TCAD software, allowing them to perform simulations and optimization designs for various types of detectors.

Photodetectors are optoelectronic conversion devices that integrate multiple disciplines, including electronic science, materials science, optical engineering, and semiconductor physics. They are high-tech products with widespread applications across military and civilian fields such as meteorological satellites, infrared imaging, astronomical detection, precision guidance, environmental monitoring, and spectral analysis.

Photodetectors can be classified by material into types like AlGaN/SiC/Ga₂O₃ solar-blind ultraviolet/extreme ultraviolet detectors, HgCdTe infrared detectors, InGaAs infrared detectors, 2D material detectors, colloidal quantum dot detectors, and antimonide infrared detectors. Structurally, they include PIN detectors, APDs (Avalanche Photodiodes), QWIPs (Quantum Well Infrared Photodetectors), Type II quantum well detectors, UTC-PDs (Uni-Traveling Carrier Photodiodes), MSM-type detectors, transistor detectors, and bi-color or multi-color detectors. With revolutionary developments in fields crucial to human life and survival, photodetectors face new opportunities and challenges, requiring higher response speed, sensitivity, efficiency, and lower cost. Researchers have long been exploring various methods and technologies to address these challenges, including device simulation techniques.

This topic utilizes simulation techniques to calculate the optoelectronic characteristics of devices such as PIN APD, SAGCM APD, UTC-PD, QWIP, MSM PD, and Type II PD. It covers device structure construction, model setup, and result output, aiming to enable users to understand device simulation technology, comprehend the operating principles of different detectors through simulation, and develop high-performance, innovative detectors to meet these challenges.

2. Simulation Tools

This topic uses Nuwa TCAD semiconductor process and device simulation software to simulate various types of detectors. Nuwa TCAD includes models for illumination, optical energy transfer, absorption, refractive index, interface effects, defects, SRH recombination, Auger recombination, carrier transport, and impact ionization, which are used to describe physical processes such as photon absorption, carrier transport, and avalanche effects in different detectors.