Nuwa TCAD
Analyze the internal physical mechanisms of semiconductor devices, optimize process and device design, and improve the performance, product development efficiency, and yield of semiconductor devices.
Features > Process Simulation > Implantation
- Features
- Process Simulation
- Efficiency Features
Ion Implantation
GMPT, October 2024
The ion implantation process involves repeatedly bombarding the semiconductor with high-energy impurity ions, allowing precise control over the dosage, uniformity, and depth distribution of impurities within the semiconductor. It is an important step in semiconductor manufacturing. The ion implantation function of Nuwa TCAD software can simulate the impurity distribution within the semiconductor and provide directions for process exploration.
Ion Implantation Simulation Models
Nuwa TCAD simulation tools include selectable ion implantation simulation models and a list of importable or modifiable model parameters. The ion implantation process simulation models include:
- Gaussian model
- Pearson model and Dual-Pearson model
- SIMS doping distribution
- Monte Carlo BCA model
Features
- The material library includes analytical models, Monte Carlo models, and SIMS distributions, along with corresponding parameter lists.
- Supports importing and saving SIMS doping distributions and other model parameters.
- The Monte Carlo BCA model supports ion implantation calculations for single-crystal, polycrystalline, and amorphous materials and includes empirical models for crystal damage caused by implantation.